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AOT412 N-Channel SDMOSTM Power Transistor
General Description
The AOT412 and AOT412L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.
Features
VDS (V) =100V ID = 60A RDS(ON) < 15.8m RDS(ON) < 19.4m (VGS = 10V) (VGS = 10V) (VGS = 7V)
- RoHS Compliant - AOT412L is Halogen Free
100% UIS Tested! 100% R g Tested!
TO-220 D
G G D S S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TC=25C TC=100C TA=25C TA=70C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
Maximum 100 25 60 44 140 8.2 6.6 47 110 150 75 2.6 1.7 -55 to 175
Units V V A
Pulsed Drain Current C
A A mJ W W C
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 15 40 0.7
Max 18 48 1
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT412
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=7V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 2150 VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180 60 0.5 36 VGS=10V, VDS=50V, ID=20A 10 14 9 VGS=10V, VDS=50V, RL=5, RGEN=3 IF=20A, dI/dt=500A/s 15 67 Conditions ID=250A, VGS=0V VDS=100V, VGS=0V TJ=55C VDS=0V, VGS= 25V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 2.6 140 13.2 25 15.5 30 0.65 1 60 2680 260 100 1 45 12 17 15 19 16 27 10 22 96 29 125 3220 340 140 1.5 54 14 20 21 15.8 30 19.4 3.2 Min 100 10 50 100 3.8 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. Rev 0: Nov-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140 120 100 ID (A) ID(A) 80 60 40 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 17 16 RDS(ON) (m) 15 14 VGS=10V 13 12 11 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 VGS=7V Normalized On-Resistance 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 200 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) VGS=7V ID=20A VGS=10V ID=20A 6V 20 VGS=5.5V 0 0 2 4 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6.5V 60 40 125C 25C 10V 7.5V 7V 80 100 VDS=5V
17 5 2 10
33 ID=20A 28 RDS(ON) (m) IS (A) 23 18 13 25C 8 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 125C
1.0E+02 1.0E+01
40
1.0E+00 1.0E-01 1.0E-02 1.0E-03 0.0 0.2
125C 25C
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=50V ID=20A Capacitance (pF) 3600 3200 2800 2400 2000 1600 1200 800 400 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 100.0 10s Power (W) 1000 800 TJ(Max)=175C TC=25C 0 0 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 20 100 Crss Coss Ciss
8
VGS (Volts)
6
4
2
ID (Amps)
10.0 1.0 0.1 0.0 0.01
RDS(ON) limited DC
10s 100s 1ms 10ms
600 400 200 0 0.0001
TJ(Max)=175C TC=25C
17 5 2 10
0.1
1 10 VDS (Volts)
100
1000
0.001
0.01
0.1
1
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
10 ZJC Normalized Transient Thermal Resistance
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0
10
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=1C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
1
0.1
PD Ton
0.01 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1
T 10 100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70 IAR(A) Peak Avalanche Current 60 Power Dissipation (W) TA=25C 50 40 30 20 10 0 0.000001 TA=150C TA=125C TA=100C 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note F)
0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C)
70 60 Current rating ID(A) 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note F)
10000
TA=25C
1000
100
17 5 2 10
Power (W)
10
1 0 0 0 0.01 0.1 1 10 100 1000 0
Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=48C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000
0.01
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
220 200 180 160 Qrr (nC) 140 120 100 80 60 40 20 0 5 10 15 20 25 30 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 180 160 140 Qrr (nC) 120 100 80 60 40 20 0 Qrr Irm 200 400 25C 125C 10 25C 600 800 0 1000 Is=20A 125C 50 40 30 20 35 30 25 Irm (A) trr (ns) 20 15 10 5 0 0 200 125 400 600 800 25C S 25C 125C trr 1 S Irm 25C Qrr 125C 20 10 0 di/dt=800A/s 125C 25C 50 40 30 30 25 20 trr (ns) Irm (A) 15 10 5 0 0 5 10 15 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 2 S 25C 125C di/dt=800A/s 125C 2 1.8 1.6 trr 1.4 25C 1.2 1 0.8 0.6 0.4 0.2 0
Is=20A
1.5
0.5
di/dt (A/s) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt
0 1000
di/dt (A/s) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
S
AOT412
Gate Charge Test Circuit & W aveform
Vgs
Qg
+
VDC
10V
VDC
DUT
+ Vds -
Qgs
Qgd
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Rg Vgs
Vgs
DUT
VDC
+ Vdd -
90%
10% Vgs
t d(on) t on tr t d(off) t off tf
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
Vds
Id
Vgs
E AR= 1/2 LIAR
Vds
Vgs
2
BVDSS
VDC
+ Vdd -
Rg
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Vds +
DUT
Q rr = - Idt
Vgs
t rr
Vds -
Isd
Vgs
L
Isd
IF
VDC
+ Vdd Vds
dI/dt
I RM
Vdd
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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